• DocumentCode
    1084302
  • Title

    Electron transport in GaAs n+-p--n+submicron diodes

  • Author

    Adachi, S. ; Kawashima, M. ; Kumabe, K. ; Yokoyama, K. ; Tomizawa, M.

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
  • Volume
    3
  • Issue
    12
  • fYear
    1982
  • fDate
    12/1/1982 12:00:00 AM
  • Firstpage
    409
  • Lastpage
    411
  • Abstract
    Experimental and calculated results are presented for the current-voltage characteristics in GaAs n+-p--n+submicron diodes. It is found from the results that the drift-diffusion equation is a valid description in such short-channel diodes. It is also recognized that the electron velocity in the diodes is considerably higher than that in the long-channel, collision-dominated devices.
  • Keywords
    Current-voltage characteristics; Electrons; Equations; Gallium arsenide; Lead compounds; Low voltage; Neodymium; Semiconductor devices; Semiconductor diodes; Switches;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25617
  • Filename
    1482722
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1084302