Gated carbon nanotube emitter with low driving voltage

Author

Chun Gyoo Lee ; Sang Jo Lee ; Sung Hee Cho ; Eung Joon Chi ; Byung Gon Lee ; Sang Ho Jeon ; Sang Hyuck Ahn ; Su Bong Hong ; Deok Hyeon Choe

Author_Institution

Corporate R&D Center, Samsung SDI Co. Ltd, Yongin-City, South Korea

Volume

25

Issue

9

fYear

2004

Firstpage

605

Lastpage

607

Abstract

By approaching the counter electrode to the carbon nanotubes (CNT) emitter, remarkable reduction of the cathode operating voltage has been accomplished in the under-gate CNT cathode structure. The peak emission current density of 2.5 mA/cm², which is sufficient for high brightness CNT field emission display, was obtained at the cathode-to-gate voltage of 57 V when the CNT-to-counter electrode gap was 2.2 μm. The gate current was less than 10% of the anode current. The CNT cathode with low driving voltage can help the cost-effective field emission display implemented.

Keywords

carbon nanotubes; cathodes; electron field emission; field emission displays; 57 V; CNT cathode; CNT-to-counter electrode gap; anode current; carbon nanotube emitter; cathode operating voltage; cathode structure; cathode-to-gate voltage; counter electrode; driving voltage; field emission display; gate current; gated emitter; peak emission current density; Anodes; Carbon nanotubes; Cathodes; Counting circuits; Current density; Electrodes; Fabrication; Flat panel displays; Low voltage; Manufacturing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.833376

Filename

1327708