High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors

Author

Black, Charles T. ; Guarini, Kathryn W. ; Zhang, Ying ; Kim, Hyungjun ; Benedict, John ; Sikorski, Edmund ; Babich, Inna V. ; Milkove, Keith R.

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

25

Issue

9

fYear

2004

Firstpage

622

Lastpage

624

Abstract

We combine nanometer-scale polymer self assembly with advanced semiconductor microfabrication to produce metal-oxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology.

Keywords

MOS capacitors; capacitance; self-assembly; accumulation capacitance; high-capacity MOS decoupling capacitors; metal-oxide-semiconductor; nanometer-scale polymer self assembly; on-chip power supply decoupling capacitors; planar devices; process complexity; self assembly technique; self-assembled MOS decoupling capacitors; semiconductor microfabrication; silicon-on-insulator technology; surface area; Capacitance; Fabrication; Frequency; Integrated circuit noise; MIM capacitors; MOS capacitors; Nanoscale devices; Power supplies; Self-assembly; Semiconductor device noise; Decoupling capacitor; high surface area; metal–oxide–semiconductor; self assembly;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.834637

Filename

1327714