• DocumentCode
    1084620
  • Title

    Effects of grain isolation on magnetic properties of c-axis uniaxially in-plane oriented barium hexaferrite thin films

  • Author

    Chen, Yingjian ; Sui, Xiaoyu ; Kryder, Mark H.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
  • Volume
    32
  • Issue
    4
  • fYear
    1996
  • fDate
    7/1/1996 12:00:00 AM
  • Firstpage
    3313
  • Lastpage
    3318
  • Abstract
    Magnetic properties of c-axis uniaxially in-plane aligned Ba-ferrite thin films were studied. Ba-ferrite thin films on [110] a-plane single-crystal sapphire substrates were deposited by low-power RF diode sputtering. Different degrees of grain isolation were achieved via postdeposition annealing at various temperatures in a rapid thermal annealing furnace. In this study, a magnetic evaluation of intergranular interaction was carried out using the well-established remanent magnetization ΔM curve. The results presented indicate a positive magnetostatic interaction, the strength of which is correlated with grain separation when measured along the magnetic easy axis direction. A predominant negative magnetostatic interaction was observed when measured along the magnetic hard axis direction, the magnitude of which is relatively independent of further grain separation
  • Keywords
    barium compounds; ferrites; magnetic thin films; rapid thermal annealing; remanence; sputtered coatings; BaFe12O19; [110] a-plane single-crystal sapphire substrate; c-axis uniaxially in-plane oriented barium hexaferrite thin film; easy axis; grain isolation; hard axis; intergranular magnetostatic interaction; low-power RF diode sputtering; magnetic properties; rapid thermal annealing; remanent magnetization; Diodes; Furnaces; Magnetic films; Magnetic properties; Magnetic separation; Magnetostatics; Radio frequency; Rapid thermal annealing; Sputtering; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.508396
  • Filename
    508396