DocumentCode
1084853
Title
High power operation of multiquantum well DFB lasers at 1.3 μm
Author
Chen, T.R. ; Chen, P.C. ; Ungar, J. ; Bar-Chaim, N.
Author_Institution
Ortel Corp., Alhambra, CA, USA
Volume
31
Issue
16
fYear
1995
fDate
8/3/1995 12:00:00 AM
Firstpage
1344
Lastpage
1345
Abstract
130 mW CW singlemode operation of an InGaAsP/InP strained multiquantum well DFB laser at 1.31 μm is reported. The laser showed low threshold current, high quantum efficiency and very good linearity
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; quantum well lasers; 1.3 micrometre; 130 mW; CW singlemode operation; InGaAsP-InP; InGaAsP/InP; linearity; multiquantum well DFB lasers; quantum efficiency; strained multiquantum well; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950894
Filename
408314
Link To Document