DocumentCode
1085255
Title
Vertical MOS technology with sub-0.1 μm channel lengths
Author
Gossner, H. ; Wittmann, F. ; Eisele, I. ; Grabulla, T. ; Behammer, D.
Author_Institution
Univ. der Bundeswehr Munchen, Neubiberg, Germany
Volume
31
Issue
16
fYear
1995
fDate
8/3/1995 12:00:00 AM
Firstpage
1394
Lastpage
1396
Abstract
A vertical MOSFET with a channel length of 85 nm has been fabricated by molecular beam epitaxy. Compared to previous work, the electrical behaviour has been greatly improved, allowing the use of standard simulation tools for analysing the I-V characteristics. From experimental and theoretical results. We conclude that for vertical MOSFETs. The useful minimum channel length is not limited by the technological constraints but by the physical limits of the electrical performance. The useful minimum channel length is estimated to be ~80 nm
Keywords
MOS integrated circuits; MOSFET; integrated circuit technology; molecular beam epitaxial growth; semiconductor growth; 80 to 85 nm; I-V characteristics; MBE; electrical behaviour; minimum channel length; molecular beam epitaxy; vertical MOS technology; vertical MOSFET;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950890
Filename
408349
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