• DocumentCode
    1085283
  • Title

    Mechanisms of the negative-resistance characteristics in AC thin-film electroluminescent devices

  • Author

    Yang, Kei-Wean C. ; Owen, S.J.T.

  • Author_Institution
    Tektronix, Incorporated, Beaverton, OR
  • Volume
    30
  • Issue
    5
  • fYear
    1983
  • fDate
    5/1/1983 12:00:00 AM
  • Firstpage
    452
  • Lastpage
    459
  • Abstract
    A model describing the mechanism responsible for generating the negative-resistance phenomenon found in hysteretic ZnS:Mn ACTFEL devices is presented. This model, which is based on simple physics intuitions rather than elaborate mathematical and numerical analyses, outlines several essential device parameters that are necessary to induce the negative-resistance effect.
  • Keywords
    Brightness; Character generation; Electroluminescent devices; Hysteresis; Mathematical model; Numerical analysis; Physics; Thin film devices; Voltage; Zinc compounds;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21146
  • Filename
    1483047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1085283