DocumentCode
1085597
Title
Electron-bombarded semiconductor (EBS) switch
Author
MacDonald, R. Ian ; Hum, Robert H.
Author_Institution
Communications Research Centre, Ottawa, Ont., Canada
Volume
30
Issue
6
fYear
1983
fDate
6/1/1983 12:00:00 AM
Firstpage
609
Lastpage
611
Abstract
The swiching of an electron-bombarded semiconductor diode by means of forward bias is demonstrated. With development, such switches may be advantageous for high-power, high-frequency matrix switching. A theoretical argument indicates that isolation similar to that of optoelectronic diode switches without gain can be obtained. Isolation over 30 dB is observed in a simple experiment.
Keywords
Communication switching; Detectors; Frequency; Optical arrays; Optical modulation; Optical sensors; Optical switches; Photodetectors; Semiconductor diodes; Signal generators;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21177
Filename
1483078
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