DocumentCode
1085785
Title
Integrated npn/pnp GaAs/AlGaAs HBTs grown by selective MBE
Author
Umemoto, D.K. ; Velebir, J.R. ; Kobayashi, K.W. ; Oki, A.K. ; Streit, D.C.
Author_Institution
TRW Electron. & Technol. Div., Redondo Beach, CA, USA
Volume
27
Issue
17
fYear
1991
Firstpage
1517
Lastpage
1518
Abstract
npn and pnp GaAs/AlGaAs heterojunction bipolar transistors have been successfully fabricated on the same GaAs substrate using selective molecular beam epitaxy and a new merged HBT processing technology. The DC and microwave characteristics of the transistors are equivalent to those of similar HBTs grown by conventional MBE on separate GaAs substrates.
Keywords
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; DC characteristics; GaAs-AlGaAs; HBTs; heterojunction bipolar transistors; merged HBT processing technology; microwave characteristics; monolithic complementary HBTs; npn HBTs; pnp HBTs; same GaAs substrate; selective MBE; selective molecular beam epitaxy; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910953
Filename
132781
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