Optoelectronic integration of a GaAs/AlGaAs bistable field effect transistor (BISFET) and LED

Author

Ojha, J.J. ; Simmons, J.G. ; Mand, R.S. ; SpringThorpe, A.J.

Author_Institution

Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada

Volume

15

Issue

2

fYear

1994

Firstpage

57

Lastpage

59

Abstract

The bistable field effect transistor (BISFET) is a novel inversion-channel switching device exhibiting abrupt current transitions and hysteresis in its output characteristics. The semiconductor structure of the BISFET is compatible with a range of electronic and optoelectronic devices. In this work, integration of a BISFET with an LED is reported. Both devices have been implemented on a single semiconductor substrate using a single fabrication sequence. The BISFET is used to current drive the LED. Abrupt transitions and hysteresis are seen in the optical output from the circuit in the range of gate voltage from 1.75 V to 1.9 V.<>

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; integrated optoelectronics; light emitting diodes; semiconductor switches; 1.75 to 1.9 V; BISFET; GaAs-AlGaAs; LED; OEIC; bistable FET; bistable field effect transistor; current drive; hysteresis; inversion-channel switching device; optical output; optoelectronic integration; semiconductor structure; semiconductor substrate; single fabrication sequence; Circuits; FETs; Gallium arsenide; Hysteresis; Light emitting diodes; Optical bistability; Optical device fabrication; Optoelectronic devices; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.285374

Filename

285374