Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

Author

Welser, J. ; Hoyt, J.L. ; Gibbons, J.F.

Author_Institution

Solid State Electron. Lab., Stanford Univ., CA, USA

Volume

15

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

100

Lastpage

102

Abstract

Enhanced performance is demonstrated in n-type metal-oxide-semiconductor field-effect transistors with channel regions formed by pseudomorphic growth of strained Si on relaxed Si/sub 1/spl minus/x/Ge/sub x/. Standard MOS fabrication techniques were utilized, including thermal oxidation of the strained Si. Surface channel devices show low-field mobility enhancements of 80% at room temperature and 12% at 10 K, when compared to control devices fabricated in Czochralski Si. Similar enhancements are observed in the device transconductance. In addition, buried channel devices show peak room temperature mobilities about three times that of control devices.<>

Keywords

Ge-Si alloys; carrier mobility; insulated gate field effect transistors; oxidation; semiconductor growth; semiconductor materials; silicon; 10 K; MOS fabrication techniques; Si-SiGe; buried channel devices; channel regions; device transconductance; low-field mobility enhancements; n-type metal-oxide-semiconductor field-effect transistors; pseudomorphic growth; room temperature mobilities; surface channel devices; thermal oxidation; Atomic force microscopy; Electron mobility; Epitaxial layers; FETs; Fabrication; MOSFET circuits; Oxidation; Strain control; Temperature control; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.285389

Filename

285389