Hydrogen permeation, Si defect generation, and their interaction during CHF/sub 3//O/sub 2/ contact etching

Author

Awadelkarim, O.O. ; Mikulan, P.I. ; Gu, T. ; Ditizio, R.A. ; Fonash, S.J.

Author_Institution

Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA

Volume

15

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

85

Lastpage

87

Abstract

Hydrogen permeation and the simultaneous Si substrate defect generation occurring during contact reactive ion etching utilizing CHF/sub 3/-based chemistries were studied using SiO/sub 2//Si structures. The process-parameter space for the etches consisted of magnetic field intensity and overetch percentage. Characterization was carried out by means of 1 MHz capacitance-voltage and deep-level transient spectroscopy measurements. This characterization establishes for the first time that the presence of permeating hydrogen does not prevent Si defect generation but, instead, acts only to passivate such defects. The characterization also demonstrates that this hydrogen permeation into the Si substrate is enhanced by increasing the magnetic field intensity.<>

Keywords

characteristics measurement; deep level transient spectroscopy; elemental semiconductors; semiconductor technology; silicon; silicon compounds; sputter etching; CHF/sub 3//O/sub 2/ contact etching; SiO/sub 2/-Si; SiO/sub 2//Si structures; capacitance-voltage measurements; deep-level transient spectroscopy measurements; defect generation; hydrogen permeation; magnetic field intensity; overetch percentage; passivation; process-parameter space; reactive ion etching; Boron; Capacitance measurement; Doping; Etching; Hydrogen; Magnetic field measurement; Magnetic fields; Monitoring; Plasma applications; Spectroscopy;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.285394

Filename

285394