• DocumentCode
    1086300
  • Title

    Electron—Hole recombination antiblooming for virtual-phase CCD imager

  • Author

    Hynecek, Jaroslav

  • Author_Institution
    Texas Instruments, Inc., Dallas, TX
  • Volume
    30
  • Issue
    8
  • fYear
    1983
  • fDate
    8/1/1983 12:00:00 AM
  • Firstpage
    941
  • Lastpage
    948
  • Abstract
    This paper describes a new antiblooming concept employing localized and controlled charge removal from a photosite based on electron-hole recombination via interface traps. The concept can be applied to various types of CCD and CID devices, and is demonstrated on a 490V \\times 581H frame transfer virtual-phase CCD imager. Results of antiblooming experiments as well as experiments addressing some of the physical parameters of the electron-hole recombination process are given.
  • Keywords
    Charge carrier processes; Charge coupled devices; Electron traps; Energy measurement; Energy states; Instruments; Monitoring; Photonic band gap; Potential energy; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21241
  • Filename
    1483142
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1086300