• DocumentCode
    1086325
  • Title

    High Voltage Marx Generator Implementation using IGBT Stacks

  • Author

    Kim, Jong-Hyun ; Min, Byung-Duk ; Shenderey, Sergey ; Rim, Geun-Hie

  • Author_Institution
    Korea ElectroTechnol. Res. Inst., Changwon
  • Volume
    14
  • Issue
    4
  • fYear
    2007
  • Firstpage
    931
  • Lastpage
    936
  • Abstract
    High voltage Marx generator implementation using IGBT (Insulated Gate Bipolar Transistor) stacks is proposed in this paper. To protect the Marx generator at the moment of breakdown, AOCP (Active Over-Current Protection) part is included. The Marx generator is composed of 12 stages and each stage is made of IGBT stacks, two diode stacks, and capacitors. IGBT stack is used as a single switch. Diode stacks and inductors are used to charge the high voltage capacitor at each stage without power loss. These are also used to isolate input and high voltage negative output in high voltage generation mode. The proposed Marx generator implementation uses IGBT stack with a simple driver and has modular design. This system structure gives compactness and easiness to implement the total system. Some experimental and simulated results are included to verify the system performances in this paper.
  • Keywords
    insulated gate bipolar transistors; power capacitors; power inductors; pulse generators; pulsed power supplies; IGBT stacks; Marx generator implementation; active over-current protection; diode stacks; inductors; insulated gate bipolar transistor; pulsed power supply; voltage capacitor; Capacitors; Driver circuits; Electric breakdown; Insulated gate bipolar transistors; Power generation; Pulse generation; Pulsed power supplies; Semiconductor diodes; Switches; Voltage;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/TDEI.2007.4286528
  • Filename
    4286528