• DocumentCode
    1086351
  • Title

    Electron mobility in short-channel MOSFET´s with series resistances

  • Author

    Risch, L.

  • Author_Institution
    Siemens Research Laboratories, Munich, West Germany
  • Volume
    30
  • Issue
    8
  • fYear
    1983
  • fDate
    8/1/1983 12:00:00 AM
  • Firstpage
    959
  • Lastpage
    961
  • Abstract
    Electron mobilities have been measured in transistors with channel lengths from 5.0 to 0.5 µm. The originally high low-field mobility µ0≈ 700 cm2/V . s seems to be greatly decreased by parasitic series resitances, to a minor degree also by surface scattering.
  • Keywords
    Analytical models; Electrical resistance measurement; Electron mobility; Length measurement; MOSFETs; Scattering; Silicon; Surface resistance; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21246
  • Filename
    1483147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1086351