980 nm diode laser for pumping Er/sup 3+/-doped fiber amplifiers

Author

Bour, D.P. ; Dinkel, N.A. ; Gilbert, D.B. ; Fabian, K.B. ; Harvey, M.G.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

Volume

2

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

153

Lastpage

155

Abstract

A high-power 980-nm diode laser, whose performance satisfies the requirements for pumping Er/sup 3+/-doped optical fiber amplifiers, is described. The device is grown by atmospheric pressure organometallic vapor-phase epitaxy and contains a strained, step-graded In/sub 0.25/Ga/sub 0.75/As/AlGaAs single-quantum-well active region. The threshold current of the ridge-waveguide laser is 8 mA, and a CW power output of 125 mW with a different quantum efficiency of 59% is demonstrated.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical pumping; optical waveguides; semiconductor junction lasers; vapour phase epitaxial growth; 125 mW; 59 percent; 8 mA; 980 nm; CW power output; Er/sup 3+/-doped fiber amplifiers; In/sub 0.25/Ga/sub 0.75/As-AlGaAs; atmospheric pressure organometallic vapor-phase epitaxy; diode laser; optical fiber amplifiers; optical pumping; quantum efficiency; ridge-waveguide laser; single-quantum-well active region; step graded SQW; strained SQW; threshold current; Diode lasers; Epitaxial growth; Erbium; Erbium-doped fiber lasers; Laser excitation; Optical fiber amplifiers; Optical fiber devices; Power lasers; Pump lasers; Quantum well lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.50872

Filename

50872