High-performance and low-consumption 10 Gb/s GaAs PHEMT driver for external modulation transmitter

Author

Demange, D. ; Billard, M. ; Devaux, F. ; Lefèvre, R.

Author_Institution

France Telecom, CNET, Bagneux, France

Volume

8

Issue

8

fYear

1996

Firstpage

1029

Lastpage

1031

Abstract

This letter describes the realization of a high-performance GaAs PHEMT driver for 10 Gb/s transmitter with external coding in long haul optical transmission systems. It is shown that with an appropriate design for both IC and packaging, gain up to 14 dB, 2.5 Vp-p output drive-voltage and 1.5 W power consumption can be achieved, with adequate switching times for bit rates up to 12.5 Gb/s. The module has been successfully tested with a 18 GHz bandwidth polarization-independant pigtailed MQW electroabsorption modulator.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; encoding; gallium arsenide; high electron mobility transistors; integrated circuit packaging; integrated optoelectronics; optical transmitters; semiconductor quantum wells; 1.5 W; 10 Gbit/s; 12.5 Gbit/s; 14 dB; 18 GHz; GaAs; IC; PHEMT driver; bandwidth polarization-independant pigtailed MQW electroabsorption modulator; bit rates; design; external coding; external modulation transmitter; gain; long haul optical transmission systems; output drive-voltage; packaging; power consumption; pseudomorphic high electron mobility transistor; switching times; Bandwidth; Bit rate; Energy consumption; Gallium arsenide; Integrated circuit packaging; Optical modulation; Optical transmitters; PHEMTs; Polarization; Testing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.508727

Filename

508727