DocumentCode
1087406
Title
IIA-1 (GaAl)As/GaAs heterojunction dipolar transistors with graded composition in the base
Author
Miller, Douglas L. ; Asbeck, P.M. ; Anderson, R.J. ; Eisen, F.H.
Volume
30
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
1565
Lastpage
1566
Keywords
Bipolar transistors; Cutoff frequency; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Packaging; Photonic band gap; Substrates; Velocity measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21340
Filename
1483241
Link To Document