IIA-8 device characteristics of short channel high electron mobility transistor (HEMT)

Author

Nishiuchi, K. ; Mimura, Takashi ; Kuroda, Sho ; Hiyamizu, S. ; Nishi, Hidetaka ; Abe, Makoto

Volume

Issue

fYear

1983

fDate

11/1/1983 12:00:00 AM

Firstpage

1569

Lastpage

1570

Keywords

Charge carrier processes; Circuit testing; Current measurement; Flip-flops; Gallium arsenide; HEMTs; MODFETs; Substrates; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1983.21348

Filename

1483249

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