• DocumentCode
    1087796
  • Title

    A Ga0.47In0.53As/InP heterophotodiode with reduced dark current

  • Author

    Pearsall, Thomas P. ; Piskorski, M. ; Brochet, A. ; Chevrier, J.

  • Author_Institution
    Bell Labs., Murray Hill, NJ, USA
  • Volume
    17
  • Issue
    2
  • fYear
    1981
  • fDate
    2/1/1981 12:00:00 AM
  • Firstpage
    255
  • Lastpage
    259
  • Abstract
    We have used a Ga0.47In0.53As/InP heterostructure to produce a photodiode (area = 3 \\times 10^{-4} cm2) which shows a saturated dark current of 100 pA at 23°C and 1.7 nA at 50°C. At this dark current, these photodiodes have near-unity quantum efficiency at 1.6 μm and show good photoresponse over the 1.0-1.65 \\mu m region of the optical spectrum.
  • Keywords
    Charge carrier processes; Optical fiber receivers; Dark current; Indium phosphide; Optical receivers; Optical saturation; Optical sensors; Photodiodes; Photonic band gap; Semiconductor diodes; Semiconductor materials; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1981.1071057
  • Filename
    1071057
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1087796