DocumentCode
1087950
Title
IVB-3 long-lived GaAlAs laser diodes with multiple quantum wells grown by organometallic vapor phase epitaxy
Author
Paoli, T.L. ; Lindstrom, C. ; Burnham, R.D. ; Scifres, D.R. ; Streifer, W.
Volume
30
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
1593
Lastpage
1593
Keywords
Accelerated aging; Diode lasers; Epitaxial growth; Fiber lasers; Laser modes; Optical materials; Protons; Pulse width modulation; Quantum well lasers; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21384
Filename
1483285
Link To Document