DocumentCode
1088087
Title
VA-8 germanium MISFETs exhibiting low interface state density using Ge3 N4 gate insulator
Author
Rosenberg, James J.
Author_Institution
Columbia University
Volume
30
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
1602
Lastpage
1602
Keywords
Analog circuits; Charge carrier processes; Dielectrics and electrical insulation; Electron mobility; FETs; Fabrication; Gallium arsenide; Germanium; Interface states; MISFETs;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21396
Filename
1483297
Link To Document