• DocumentCode
    1088699
  • Title

    Analysis and Design of a Novel \\times 4 Subharmonically Pumped Resistive HEMT Mixer

  • Author

    Gunnarsson, Sten E.

  • Author_Institution
    Chalmers Univ. of Technol., Goteborg
  • Volume
    56
  • Issue
    4
  • fYear
    2008
  • fDate
    4/1/2008 12:00:00 AM
  • Firstpage
    809
  • Lastpage
    816
  • Abstract
    In this paper, a novel topology of an HEMT-based subharmonically pumped resistive mixer (SHPRM) is presented, i.e., the times4SHPRM. The presented topology requires only a quarter of the local oscillator (LO) frequency compared to a fundamentally pumped mixer (e.g., 15 instead of 60 GHz in a 60-GHz system). This reduction in required LO frequency provides a significant reduction in complexity of the overall radio front-end and reduces the dc power consumption as well as the occupied chip area. Thus, the times4SHPRM provides a significant cost reduction for a millimeter-wave system. Furthermore, the times4SHPRM can be used for both up- and down-conversion and it can be implemented in any field-effect transistor technology. The principle of the times4SHPRM is presented and wave analysis is applied in order to investigate the fundamental limitations of this mixer topology. For an evaluation of the times4SHPRM topology, three different monolithic microwave integrated circuits (MMICs) were designed and manufactured in the same MMIC metamorphic HEMT technology. Besides measured performance of the times4SHPRM, a traditional times2SHPRM and a single-ended resistive mixer were implemented and their performances are presented and compared. All of these MMICs operate with a 60-GHz RF frequency and employ LO signals close to 15, 30, and 60 GHz, respectively.
  • Keywords
    MMIC mixers; high electron mobility transistors; millimetre wave mixers; MMIC; cost reduction; field-effect transistor technology; frequency 60 GHz; millimeter-wave system; mixer topology; monolithic microwave integrated circuits; radio front-end; subharmonic pumped resistive HEMT mixer; 60 GHz; $times$4 SHPRM; $V$-band; Field-effect transistor (FET); high linearity; low power consumption; metamorphic HEMT (mHEMT); monolithic microwave integrated circuit (MMIC); single-ended resistive mixer (SRM); subharmonically pumped resistive mixer (SHPRM); wave analysis;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2008.918150
  • Filename
    4460583