DocumentCode
1088823
Title
GaAs monolithic MIC´s for direct broadcast satellite receivers
Author
Hori, Shigekazu ; Kamei, Kiyoho ; Shibata, Kiyoyasu ; Tatematsu, Mikio ; Mishima, Katsuhiko ; Okano, Susumu
Author_Institution
Toshiba Corporation, Kawasaki, Japan
Volume
30
Issue
12
fYear
1983
fDate
12/1/1983 12:00:00 AM
Firstpage
1867
Lastpage
1874
Abstract
A 12-GHz low-noise amplifier (LNA), a 1-GHz IF amplifier (IFA), and an 11-GHz dielectric resonator oscillator (DRO) have been developed for DBS home receiver applications by using GaAs monolithic microwave integrated circuit (MMIC) technology. Each MMIC chip contains FETs as active elements and self-biasing source resistors and bypass capacitors for a single power supply operation. It also contains dc-block and RF-bypass capacitors. The three-stage LNA exhibits a 3.4-dB noise figure and a 19.5-dB gain over 11.7-12.2 GHz. The negative-feedback-type three-stage IFA shows a 3.9-dB noise figure and a 23-dB gain over 0.5-1.5 GHz. The DRO gives 10-mW output power at 10.67 GHz, with a frequency stability of 1.5 MHz over a temperature range from -40-80° C. A direct broadcast satellite (DBS) receiver incorporating these MMIC´s exhibits an overall noise figure of ≤ 4.0 dB for frequencies from 11.7-12.2 GHz.
Keywords
Capacitors; Dielectrics; Frequency; Gallium arsenide; Low-noise amplifiers; MMICs; Microwave amplifiers; Microwave integrated circuits; Noise figure; Satellite broadcasting;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21463
Filename
1483364
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