• DocumentCode
    108922
  • Title

    APEC Guides Engineers to Latest Advances in Power Devices, Components, and Packaging: High-voltage gallium nitride transistors and the new generation of digital controllers

  • Author

    Bindra, Ashok

  • Volume
    2
  • Issue
    2
  • fYear
    2015
  • fDate
    Jun-15
  • Firstpage
    48
  • Lastpage
    53
  • Abstract
    Continuing its long-standing tradition of addressing issues of immediate and long-term interest to practicing power electronics engineers, the IEEE Applied Power Electronics Conference and Exposition (APEC) celebrated its 30th anniversary this year in Charlotte, North Carolina, 15-19 March. While many advances and innovations in areas ranging from power semiconductor devices to circuit components and packaging were presented, two key trends took center stage: the availability of high-voltage gallium nitride (GaN) transistors with improved reliability, among other widebandgap devices, and the new generation of digital controllers for smooth transition from analog to digital power management in dc-dc and ac-dc power converters. In addition, the Power Sources Manufacturers Association (PSMA) presented its technology report on three-dimensional (3-D) power packaging with a focus on embedded substrate technologies.
  • Keywords
    AC-DC power convertors; DC-DC power convertors; IEEE standards; III-V semiconductors; gallium compounds; power transistors; semiconductor device packaging; semiconductor device reliability; wide band gap semiconductors; 3D power packaging; APEC; GaN; IEEE Applied Power Electronics Conference and Exposition; PSMA; Power Sources Manufacturers Association; ac-dc power converters; analog to digital power management; circuit components; dc-dc power converters; digital controllers; embedded substrate technologies; high-voltage transistors; power devices; power electronics engineers; power semiconductor devices; reliability improvement; three-dimensional power packaging; wide bandgap devices; Gallium nitride; HEMTs; Inverters; MODFETs; Silicon carbide;
  • fLanguage
    English
  • Journal_Title
    Power Electronics Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    2329-9207
  • Type

    jour

  • DOI
    10.1109/MPEL.2015.2422271
  • Filename
    7130741