DocumentCode
1089610
Title
A new CMOS structure with vertical p-channel transistors
Author
Yeh, W.C. ; Jaeger, R.C. ; Cook, K.B.
Author_Institution
Auburn University, Auburn, AL
Volume
4
Issue
6
fYear
1983
fDate
6/1/1983 12:00:00 AM
Firstpage
196
Lastpage
198
Abstract
A new structure is presented which uses vertical p-channel transistors to enhance the capability of CMOS technology. This structure gives improved circuit density over conventional planar CMOS with equivalent performance. Ring oscillators were used to evaluate the switching performance of the new CMOS structure and to compare it with planar CMOS.
Keywords
CMOS logic circuits; CMOS technology; Epitaxial layers; Fabrication; Logic devices; MOS devices; MOSFETs; Ring oscillators; Silicon; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25702
Filename
1483446
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