• DocumentCode
    1089757
  • Title

    Highly efficient GaAs power MESFETs with n+-asymmetrical LDD structure

  • Author

    Yanagihara, M. ; Ota, Yoshiharu ; Nishii, Kento ; Ishikawa, O. ; Tamura, A.

  • Author_Institution
    Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
  • Volume
    28
  • Issue
    7
  • fYear
    1992
  • fDate
    3/26/1992 12:00:00 AM
  • Firstpage
    686
  • Lastpage
    687
  • Abstract
    Highly efficient GaAs power MESFETs with n+-asymmetrical lightly doped drain (LDD) structure and refractory gate metal have been developed. The excellent RF performance of 32.5 dBm output power and 70% power-added efficiency at 950 MHz, Vds=4.7 V and 21 dBm input power was typically obtained.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; 70 percent; 950 MHz; GaAs; RF performance; UHF; lightly doped drain; n +-asymmetrical LDD structure; power MESFETs; power-added efficiency; refractory gate metal;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920433
  • Filename
    133070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089757