• DocumentCode
    1089831
  • Title

    In0.53Ga0.47As submicrometer FET´s Grown by MBE

  • Author

    Chai, Y.G. ; Yeats, R.

  • Author_Institution
    Varian Associates, Inc., Palo Alto, CA
  • Volume
    4
  • Issue
    7
  • fYear
    1983
  • fDate
    7/1/1983 12:00:00 AM
  • Firstpage
    252
  • Lastpage
    254
  • Abstract
    We describe the fabrication process for InGaAs submicrometer gate JFET´s, using Be ion implantation and wet chemical etching. A gate length as small as 0.5 µm can be formed by this technique. Such FET´s made on MBE-grown material bad a dc trans-conductance as high as 85 mS/mm and showed a high power-handling capability.
  • Keywords
    Doping; Electrons; Fabrication; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Ion implantation; Microwave devices; Molecular beam epitaxial growth; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25722
  • Filename
    1483466
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089831