DocumentCode
1089852
Title
Power-efficient gate control of synchronous boost converters with high output voltage
Author
Woo, Y.-J. ; Cho, Gyu-Hyeong ; Cho, G.-H.
Author_Institution
Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon
Volume
43
Issue
3
fYear
2007
Firstpage
156
Lastpage
157
Abstract
A half output voltage swing gate driving scheme is presented for high voltage single chip DC/DC converters. In the proposed scheme the energy for the PMOS gate drive is reused for the NMOS gate drive, and switching loss is reduced. A high speed and area-efficient high voltage level shifter is also realised. A prototype is implemented using a 0.5 mum 40 V power BiCMOS process
Keywords
BiCMOS integrated circuits; DC-DC power convertors; high-speed integrated circuits; power integrated circuits; 0.5 micron; 40 V; DC/DC converters; NMOS gate drive; PMOS gate drive; area-efficient level shifter; high speed level shifter; high voltage level shifter; high voltage single chip; power BiCMOS process; power-efficient gate control; swing gate driving scheme; synchronous boost converters;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
4087787
Link To Document