• DocumentCode
    1089916
  • Title

    Separated multi clad-layer stripe-geometry GaAlAs DH laser

  • Author

    Ishikawa, Hiroshi ; Hanamitsu, Hiyoshi ; Takagi, Nobuyuki ; Fujiwara, Takao ; Takusagawa, Masahito

  • Author_Institution
    Fijitsu Lab., Ltd., Atsugi, Japan
  • Volume
    17
  • Issue
    7
  • fYear
    1981
  • fDate
    7/1/1981 12:00:00 AM
  • Firstpage
    1226
  • Lastpage
    1234
  • Abstract
    The fabrication process, the analysis of the waveguiding property, and the lasing characteristics of a separated multiclad-layer (SML) stripe-geometry laser for a 0.8 μm wavelength are described. The SML stripe geometry enables us to grow at 820°C a flat active layer without deformation of the shape of the grow by melt-etching. The analysis shows that the built-in waveguide is the effective refractive index step waveguide, in contrast to the loss step waveguide of the CSP laser, and we can fabricate a laser with small stripewidth. The fundamental transverse and longitudinal single-mode lasing were obtained with CW threshold current of 45-70 mA for the stripewidth 3-6 \\mu m. The damped relaxation oscillation and the small spectral broadening when modulated by 400 Mbits/s RZ random pulses were obtained. A small increase rate of the driving current when operated at 50°C with 5 mW/facet output was confirmed.
  • Keywords
    Gallium materials/lasers; DH-HEMTs; Geometrical optics; Laser modes; Laser stability; Optical device fabrication; Optical refraction; Optical waveguides; Refractive index; Synthetic aperture sonar; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1981.1071265
  • Filename
    1071265