GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application

Author

Asbeck, P.M. ; Chang, Mau-Chung F. ; Higgins, J.A. ; Sheng, N.H. ; Sullivan, G.J. ; Wang, Keh-Chung

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

Volume

36

Issue

10

fYear

1989

fDate

10/1/1989 12:00:00 AM

Firstpage

2032

Lastpage

2042

Abstract

Issues important for the manufacturing of GaAlAs/GaAs heterojunction bipolar transistors (HBTs) and their prospects for application in various areas are discussed. The microwave and digital performance status of HBTs is reviewed. Extrapolated values of maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported. Key prospects for further device development are highlighted

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device manufacture; solid-state microwave devices; 200 GHz; 26.9 GHz; GaAlAs-GaAs; HBTs; digital performance; frequency divider operation; heterojunction bipolar transistors; manufacturing; maximum frequency of oscillation; microwave performance; Bipolar transistors; Doping; Fabrication; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Manufacturing; Microwave transistors; Thickness control; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40886

Filename

40886