• DocumentCode
    1090637
  • Title

    Epitaxial layer enhancement of n-well guard rings for CMOS circuits

  • Author

    Troutman, R.R.

  • Author_Institution
    IBM General Technology Division, Burlington, VT
  • Volume
    4
  • Issue
    12
  • fYear
    1983
  • fDate
    12/1/1983 12:00:00 AM
  • Firstpage
    438
  • Lastpage
    440
  • Abstract
    n-well guard rings have long been used for isolating potential electron injectors to avoid latch-up of CMOS circuits. Such guard rings are shown to be orders of magnitude more efficient for CMOS fabricated in an epitaxial layer (epi-CMOS) than for bulk (non-epi) CMOS. The maximum escape probability in epi-CMOS measures 3.9E-06 while for bulk CMOS it is 1.8E-02.
  • Keywords
    Boosting; CMOS process; Circuits; Current measurement; Doping; Electrons; Epitaxial layers; Lighting control; Silicon; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25794
  • Filename
    1483538
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1090637