DocumentCode
1091865
Title
Spectral response of n+-n-p and n+-p photodiodes
Author
Arora, Narain D. ; Hauser, John R.
Author_Institution
Digital Equipment Corporation, Hudson, MA
Volume
31
Issue
4
fYear
1984
fDate
4/1/1984 12:00:00 AM
Firstpage
430
Lastpage
434
Abstract
Results of calculations for the quantum efficiency of three different types of n+-p, n+-n-p, and OCI-HLE diodes are reported. Exact numerical modeling of current density equations, modified to include bandgap reduction and Auger recombination is used to compute the quantum efficiency of these diodes. It is found that an optimized n+-p structure can result in over all spectral response comparable to the n+-n-p structure, although it is not as good as that of the OCI-HLE type of diodes. Further, these calculations show that one can achieve low dark current in these diodes, but at the expense of lower quantum efficiency particularly for wavelengths less than 0.4 µm.
Keywords
Current density; Dark current; P-n junctions; Photodiodes; Photovoltaic cells; Quantum mechanics; Radiative recombination; Reflection; Semiconductor diodes; Surface waves;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21546
Filename
1483831
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