• DocumentCode
    1091865
  • Title

    Spectral response of n+-n-p and n+-p photodiodes

  • Author

    Arora, Narain D. ; Hauser, John R.

  • Author_Institution
    Digital Equipment Corporation, Hudson, MA
  • Volume
    31
  • Issue
    4
  • fYear
    1984
  • fDate
    4/1/1984 12:00:00 AM
  • Firstpage
    430
  • Lastpage
    434
  • Abstract
    Results of calculations for the quantum efficiency of three different types of n+-p, n+-n-p, and OCI-HLE diodes are reported. Exact numerical modeling of current density equations, modified to include bandgap reduction and Auger recombination is used to compute the quantum efficiency of these diodes. It is found that an optimized n+-p structure can result in over all spectral response comparable to the n+-n-p structure, although it is not as good as that of the OCI-HLE type of diodes. Further, these calculations show that one can achieve low dark current in these diodes, but at the expense of lower quantum efficiency particularly for wavelengths less than 0.4 µm.
  • Keywords
    Current density; Dark current; P-n junctions; Photodiodes; Photovoltaic cells; Quantum mechanics; Radiative recombination; Reflection; Semiconductor diodes; Surface waves;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21546
  • Filename
    1483831