• DocumentCode
    1091894
  • Title

    Principles of operation of short-channel gallium arsenide field-effect transistor determined by Monte Carlo method

  • Author

    Awano, Yuji ; Tomizawa, Kazutaka ; Hashizume, Nobuo

  • Volume
    31
  • Issue
    4
  • fYear
    1984
  • fDate
    4/1/1984 12:00:00 AM
  • Firstpage
    448
  • Lastpage
    452
  • Abstract
    The electrical properties of a GaAs FET having a practical doping density and having a quarter-micrometer source-drain distance and a quarter-micrometer gate length have been studied by two-dimensional Monte Carlo particle simulation. I_{ds} = 3.3 mA/20µm, g_{m} = 600 mS/mm, and f_{T} = 160 GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.
  • Keywords
    Boundary conditions; Computational modeling; Doping; Electrons; FETs; Gallium arsenide; Monte Carlo methods; Neodymium; Poisson equations; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21549
  • Filename
    1483834
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1091894