DocumentCode
1092213
Title
Electron channeling and EBIC studies of edge-supported pulling silicon sheets
Author
Tsuo, Y.S. ; Hurd, Jeff L. ; Matson, Richard J. ; Ciszek, T.F. ; Ciszek, Ted F.
Author_Institution
Solar Energy Research Institute, Golden, CO
Volume
31
Issue
5
fYear
1984
fDate
5/1/1984 12:00:00 AM
Firstpage
614
Lastpage
618
Abstract
The dominant grain structure in edge-supported pulling silicon sheets has been studied by electron channeling in a scanning electron microscope. For unseeded polycrystalline silicon sheets in which equilibrium grain structures have been attained, we found that the dominant grain structure is long, narrow grains with surface normals less than twenty degrees off the [011] direction. The plane that is parallel to the growth direction and perpendicular to the surfaces for most of these grains is very close to
Keywords
Crystallization; Crystallography; Current measurement; Electrostatic precipitators; Grain size; Helium; Photovoltaic cells; Scanning electron microscopy; Silicon; Solar energy;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21577
Filename
1483862
Link To Document