• DocumentCode
    1092230
  • Title

    Equivalent electron fluence for space qualification of shallow junction heteroface GaAs solar cells

  • Author

    Wilson, John W. ; Stock, L.V.

  • Author_Institution
    NASA Langley Research Center, Hampton, VA
  • Volume
    31
  • Issue
    5
  • fYear
    1984
  • fDate
    5/1/1984 12:00:00 AM
  • Firstpage
    622
  • Lastpage
    625
  • Abstract
    It is desirable to perform qualification tests prior to deployment of solar cells in space power applications. Such test procedures are complicated by the complex mixture of differing radiation components in space which are difficult to simulate in ground test facilities. Although it has been shown that an equivalent electron fluence ratio cannot be uniquely defined for monoenergetic proton exposure of GaAs shallow junction cells, an equivalent electron fluence test can be defined for common spectral components of protons found in space. Equivalent electron fluence levels for the geosynchronous environment are presented.
  • Keywords
    Annealing; Electrons; Gallium arsenide; Performance evaluation; Photovoltaic cells; Protection; Protons; Qualifications; Test facilities; Testing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21579
  • Filename
    1483864