• DocumentCode
    1093384
  • Title

    Deep levels in MOCVD Al0.48In0.52As/InP

  • Author

    Luo, Jack K. ; Thomas, Holly ; Morris, I.L.

  • Author_Institution
    Univ. of Wales, Coll. of Cardiff, UK
  • Volume
    28
  • Issue
    8
  • fYear
    1992
  • fDate
    4/9/1992 12:00:00 AM
  • Firstpage
    797
  • Lastpage
    799
  • Abstract
    Defects in Al0.48In0.52As grown by MOCVD have been investigated by DLTS measurement. Four electron traps were observed in as-grown AlInAs, and one further in samples after annealing at TA>450 degrees C. The densities of the defects E1, E2 and E3 were found to decrease with an increase in growth temperature, and are suggested to result from excess arsenic, for example an interstitial arsenic atom. Defect E4 was not observed consistently but had a high surface concentration, which may be related to the growth contamination.
  • Keywords
    CVD coatings; III-V semiconductors; aluminium compounds; deep level transient spectroscopy; deep levels; electron traps; indium compounds; Al 0.48In 0.52As-InP; DLTS measurement; III-V semiconductors; InP; MOCVD; annealing; defect densities; electron traps; growth contamination; growth temperature; surface concentration;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920503
  • Filename
    133142
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1093384