• DocumentCode
    1093612
  • Title

    Design and performance of a new static induction thyristor—The gated V-groove p-i-n diode

  • Author

    Fisher, Carole A. ; Paxman, David H. ; Slatter, John A G

  • Author_Institution
    Philips Research Laboratories, Redhill, Surrey, England
  • Volume
    31
  • Issue
    9
  • fYear
    1984
  • fDate
    9/1/1984 12:00:00 AM
  • Firstpage
    1299
  • Lastpage
    1308
  • Abstract
    A new form of static induction thyristor is described. An account is given of models which predict the ON-state and forward blocking characteristics. Experimental results are compared with theory and conclusions drawn as to the performance of the structure relative to other SIT devices, the GTO thyristor, and the power MOS transistor.
  • Keywords
    Anodes; Cathodes; Charge carrier processes; Etching; P-i-n diodes; Plasma applications; Plasma devices; Switches; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21703
  • Filename
    1483988
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1093612