Degradation behavior of AlGaAs double-heterostructure laser diodes aged under pulsed operating conditions

AlGaAs DH laser diodes pulsed operating test results, obtained at 70°C under 5 mW/facet conditions, are reported, and degradation behavior is discussed. No additional degradation modes peculiar to the pulsed operations were observed. Experimental results are analyzed qualitatively by taking into account three degradation accelerating factors: junction temperature, net lasing time length, and injected current. Pulse duty cycle and dc bias magnitude effects on degradation behavior are clarified. Threshold current increasing rates under pulsed operating tests were smaller than the values expected from net lasing time estimated from pulse duty. Experimental results led to the conclusion that pulsed operations are more favorable than CW operations.