DocumentCode
1093721
Title
Generation function in uniformly multiplying avalanche diode
Author
Chakraborti, Nirmal B. ; Rakshit, Sambhu
Author_Institution
Indian Institute of Technology, Kharagpur, India
Volume
31
Issue
9
fYear
1984
fDate
9/1/1984 12:00:00 AM
Firstpage
1346
Lastpage
1347
Abstract
A simple method of finding generating function in uniformly multiplying avalanche diodes has been presented. Explicit expression for such functions has been obtained for some useful values of the ionization rate ratios. The application of the result in finding the pdf of a filtered avalanche process has been discussed.
Keywords
Charge carrier processes; Diodes; Electrons; Frequency; HEMTs; Ionization; MODFET circuits; Molecular beam epitaxial growth; Noise level; Space technology;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21713
Filename
1483998
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