DocumentCode
1093907
Title
Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors
Author
Pei, Y. ; Chu, R. ; Shen, L. ; Fichtenbaum, N.A. ; Chen, Z. ; Brown, D. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution
Univ. of California, Santa Barbara
Volume
29
Issue
4
fYear
2008
fDate
4/1/2008 12:00:00 AM
Firstpage
300
Lastpage
302
Abstract
AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas density; Al composition; AlGaN-GaN; AlGaN/GaN high-electron mobility transistors; gate leakage; gate recess; power performance; slant field plate gate process; Al composition; gallium nitride; gate recess; high-electron mobility transistor (HEMT); power;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2008.917936
Filename
4464133
Link To Document