DocumentCode
109409
Title
Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects
Author
Yun-Fan Liu ; Wen-Sheng Zhao ; Zheng Yong ; Yuan Fang ; Wen-Yan Yin
Author_Institution
State Key Lab. of MOI, Zhejiang Univ., Hangzhou, China
Volume
13
Issue
3
fYear
2014
fDate
May-14
Firstpage
488
Lastpage
495
Abstract
One three-dimensional (3-D) carbon-based heterogeneous interconnect scheme, consisting of a couple of horizontal multilayer graphene transmission lines (MLG-TL) and vertical through silicon carbon nanotube bundle vias (TS-CNTBV), is proposed and investigated theoretically. For its realization, some metallic bumps are used to integrate MLG-TLs with TS-CNTBVs, and contact resistance among them are characterized and compared. The lumped-element circuit model of a couple of MLG-TLs is also combined with that of TS-CNTBVs, with anomalous skin effect treated in an appropriate way. Numerical studies are performed for capturing distributed parameters as well as transmission characteristics of MLG-TLs, TS-CNTBVs, and whole 3-D interconnects at different operating frequencies. It is believed that this study can provide some useful information about carbon-based heterogeneous interconnects, where both graphene and carbon nanotube advantages can be exploited for the future 3-D ICs.
Keywords
anomalous skin effect; carbon nanotubes; contact resistance; graphene; integrated circuit interconnections; integrated circuit modelling; multilayers; three-dimensional integrated circuits; 3D carbon-based heterogeneous interconnect interconnect scheme; C; anomalous skin effect; contact resistance; distributed parameters; electrical modeling; horizontal multilayer graphene transmission lines; lumped-element circuit model; metallic bumps; operating frequencies; transmission characteristics; vertical through silicon carbon nanotube bundle vias; Capacitance; Graphene; Integrated circuit interconnections; Integrated circuit modeling; Silicon; Substrates; Through-silicon vias; Carbon nanotube (CNT) bundle; heterogeneous interconnects; multilayer graphene (MLG); through silicon via (TSV);
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2014.2307344
Filename
6746123
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