• DocumentCode
    109409
  • Title

    Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects

  • Author

    Yun-Fan Liu ; Wen-Sheng Zhao ; Zheng Yong ; Yuan Fang ; Wen-Yan Yin

  • Author_Institution
    State Key Lab. of MOI, Zhejiang Univ., Hangzhou, China
  • Volume
    13
  • Issue
    3
  • fYear
    2014
  • fDate
    May-14
  • Firstpage
    488
  • Lastpage
    495
  • Abstract
    One three-dimensional (3-D) carbon-based heterogeneous interconnect scheme, consisting of a couple of horizontal multilayer graphene transmission lines (MLG-TL) and vertical through silicon carbon nanotube bundle vias (TS-CNTBV), is proposed and investigated theoretically. For its realization, some metallic bumps are used to integrate MLG-TLs with TS-CNTBVs, and contact resistance among them are characterized and compared. The lumped-element circuit model of a couple of MLG-TLs is also combined with that of TS-CNTBVs, with anomalous skin effect treated in an appropriate way. Numerical studies are performed for capturing distributed parameters as well as transmission characteristics of MLG-TLs, TS-CNTBVs, and whole 3-D interconnects at different operating frequencies. It is believed that this study can provide some useful information about carbon-based heterogeneous interconnects, where both graphene and carbon nanotube advantages can be exploited for the future 3-D ICs.
  • Keywords
    anomalous skin effect; carbon nanotubes; contact resistance; graphene; integrated circuit interconnections; integrated circuit modelling; multilayers; three-dimensional integrated circuits; 3D carbon-based heterogeneous interconnect interconnect scheme; C; anomalous skin effect; contact resistance; distributed parameters; electrical modeling; horizontal multilayer graphene transmission lines; lumped-element circuit model; metallic bumps; operating frequencies; transmission characteristics; vertical through silicon carbon nanotube bundle vias; Capacitance; Graphene; Integrated circuit interconnections; Integrated circuit modeling; Silicon; Substrates; Through-silicon vias; Carbon nanotube (CNT) bundle; heterogeneous interconnects; multilayer graphene (MLG); through silicon via (TSV);
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2014.2307344
  • Filename
    6746123