Characterization and Modeling of the Band-to-Band Current Variability of Nanoscale Device Junctions

Author

Ghetti, Andrea ; Compagnoni, C. Monzio ; Calloni, A. ; Vendrame, L. ; Spinelli, Alessandro S. ; Lacaita, Andrea L.

Author_Institution

Process R&D, Micron Technol. Inc., Agrate Brianza, Italy

Volume

60

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

3291

Lastpage

3297

Abstract

This paper presents a detailed experimental and numerical investigation of the variability of the band-to-band leakage current of p-n junctions in nanoscale MOS devices. The experimental results reveal that this leakage follows a log-normal statistical distribution, whose spread, barely affected by temperature, increases as junction scaling proceeds. These features are correctly reproduced by 3-D device simulations, whose results allow to identify in atomistic doping the main origin of the leakage statistical dispersion.

Keywords

MIS devices; leakage currents; log normal distribution; numerical analysis; p-n junctions; semiconductor device models; semiconductor doping; statistical distributions; 3D device simulation; atomistic doping; band-to-band leakage current variability; leakage statistical dispersion; log-normal statistical distribution; nanoscale MOS device; numerical investigation; p-n junction scaling; Dispersion; Doping; Junctions; Logic gates; Numerical models; Semiconductor process modeling; Tunneling; Atomistic doping; band-to-band current; gate-induced drain leakage; semiconductor device modeling; variability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2277727

Filename

6588886