DocumentCode
1094313
Title
Ultrahigh-voltage high-current gate turn-off thyristors
Author
Yatsuo, Tsutomu ; Nagano, Takahiro ; Fukui, Hiroshi ; Okamura, Masahiro ; Sakurada, Shuroku
Author_Institution
Hitachi, Ltd., Hitachi, Ibaraki, Japan
Volume
31
Issue
12
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
1681
Lastpage
1686
Abstract
High-power GTO´s with ratings of 2500 V . 2000 A have been developed, and a 4500 V . 2000 A GTO was trial fabricated and performance tested, for use in traction motor control equipment. Their low ON-state voltage was attained by applying a unique anode emitter shorting structure which does not require doping of a lifetime killer such as gold to obtain suitable GTO characteristics. Their high interrupt current was obtained by introducing a ring-shaped gate structure which has uniform operation between many segments in the devices during turn-off process.
Keywords
Anodes; Charge carrier lifetime; Doping; Electric variables; Gold; Structural engineering; Testing; Thyristors; Traction motors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21771
Filename
1484056
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