• DocumentCode
    1094412
  • Title

    Development of positive photoresist

  • Author

    Kim, Deok Jung ; Oldham, William G. ; Neureuther, Andrew R.

  • Author_Institution
    University of California, Berkeley, CA
  • Volume
    31
  • Issue
    12
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    1730
  • Lastpage
    1736
  • Abstract
    A new model is proposed to describe the development of positive photoresist over the full range of exposure. The model includes the depth dependence of development rate and is capable of fitting measured data of all resists examined to date. A measurement system for determining the exposure and development model parameters is described. Several types of photoresist and developer have been characterized under a number of processing conditions. The effect of the development model parameters on developed resist profiles is illustrated using simulation.
  • Keywords
    Chemistry; Data mining; Electronics industry; Equations; Industrial electronics; Kinetic theory; Polynomials; Resists; Surface fitting; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21779
  • Filename
    1484064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1094412