• DocumentCode
    1095221
  • Title

    A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness

  • Author

    Barak, J. ; Levinson, J. ; Akkerman, A. ; Hass, M. ; Victoria, M. ; Zentner, A. ; David, D. ; Even, O. ; Lifshitz, Y.

  • Author_Institution
    Soreq Nucl. Res. Center, Yavne, Israel
  • Volume
    43
  • Issue
    3
  • fYear
    1996
  • fDate
    6/1/1996 12:00:00 AM
  • Firstpage
    907
  • Lastpage
    911
  • Abstract
    It is proposed to use short-range ions (along with long-range ions) to obtain the thickness of the sensitive volume, d, and the SEU and SEL cross sections vs the energy deposited in this volume, σ ion(ε). These σion(ε) and d can be used for calculating the proton induced cross sections σp . A study of Harris HM65162 CMOS SRAMs demonstrates this method. The calculated σp is in good agreement with the experimental σp
  • Keywords
    CMOS memory circuits; SRAM chips; integrated circuit reliability; integrated circuit testing; ion beam effects; proton effects; CMOS SRAMs; Harris HM65162; SEL data; SEU data; energy deposition; long-range ions; proton induced cross sections; sensitive volume thickness; short-range ions; Acceleration; Electrostatics; Energy exchange; Ion accelerators; Proton accelerators; Silicon; Single event upset; Testing; Thickness measurement; Volume measurement;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.510732
  • Filename
    510732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095221