DocumentCode
1095228
Title
Low temperature direct bonding of nonhydrophilic surfaces
Author
Bower, R.W.
Volume
30
Issue
9
fYear
1994
fDate
4/29/1994 12:00:00 AM
Firstpage
693
Lastpage
695
Abstract
The authors have found that extremely strong bonds can be formed between wafer surfaces of LPCVD silicon dioxide after a dry plasma pretreatment. The bonded wafers were examined for bond yield, interfacial quality, and mechanical strength. Preliminary results indicate that successful low-temperature bonds can be formed to nonhydrophilic surfaces
Keywords
integrated circuit technology; plasma applications; surface treatment; wafer bonding; LPCVD; bond yield; direct bonding; dry plasma pretreatment; interfacial quality; low-temperature bonds; mechanical strength; nonhydrophilic surfaces; wafer surfaces;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940497
Filename
289181
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