Modification of single event upset cross section of an SRAM at high frequencies

Author

Buchner, S. ; Campbell, A.B. ; McMorrow, D. ; Melinger, J. ; Masti, M. ; Chen, Y.J.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

Issue

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

924

Lastpage

930

Abstract

Single event upset cross sections exhibit a clock frequency dependence, the origins of which have been investigated in a CMOS SRAM, both with a pulsed laser synchronized to the operation of the circuit and with a circuit simulator modeling program

Keywords

CMOS memory circuits; SRAM chips; errors; CMOS SRAM; circuit simulator modeling program; clock frequency dependence; pulsed laser synchronization; single event upset cross section; Circuit simulation; Clocks; Discrete event simulation; Frequency dependence; Frequency synchronization; Laser modes; Optical pulses; Pulse circuits; Random access memory; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.510735

Filename

510735

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095251