Numerical modelling of mechanisms involved in latchup triggering by a laser beam

Author

Fouillat, P. ; Lapuyade, H. ; Touboul, A. ; Dom, J.P. ; Gaillard, R.

Author_Institution

Lab. IXL, Bordeaux I Univ., Talence, France

Volume

43

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

944

Lastpage

951

Abstract

The use of a laser beam is a well-known technique to trigger latchup parasitic structures in ICs. Numerical analyses of this phenomenon are brought into play to study its sensitivity when a continuous wave laser as well as pulsed lasers are used. The impact location is also studied to demonstrate that different mechanisms are involved in the triggering phase of latchup. The structure is more sensitive to blue light when it is directed over the well-substrate junction, while it is more sensitive to infrared light elsewhere. When using a CW laser, curves giving the power supply current versus the photo-induced current provide direct information on the parameters of the parasitic structure

Keywords

CMOS integrated circuits; VLSI; integrated circuit modelling; integrated circuit testing; laser beam effects; CMOS VLSI; DC triggering; blue light; continuous wave laser; impact location; infrared light; laser beam; laser charge track; latchup parasitic structures; latchup triggering; numerical modelling; power supply current photoinduced current curves; pulsed lasers; transient triggering; well-substrate junction; CMOS technology; Circuit testing; Integrated circuit testing; Laser beams; Laser modes; Optical pulses; Power lasers; Space technology; Substrates; Very large scale integration;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.510738

Filename

510738