DocumentCode
1095784
Title
Insight into criteria for design optimisation of bistable field effect transistor (BISFET)
Author
Ojha, J.J. ; Simmons, Jay G. ; Mand, R.S. ; SpringThorpe, A.J.
Author_Institution
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont.
Volume
30
Issue
10
fYear
1994
fDate
5/12/1994 12:00:00 AM
Firstpage
822
Lastpage
823
Abstract
The operation of the novel n-channel GaAs/AlGaAs bistable field effect transistor (BISFET) with a separate collector terminal is reported for the first time. The hysteresis in the previously reported source-loop transitions is found to increase from 0.5 V to 1 V with a negative collector bias, and the switching ratio increases from 1.5 to nearly 2. This suggests important criteria for design optimisation which dramatically enhance the potential of the BISFET for practical applications
Keywords
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; semiconductor switches; 1 V; BISFET; GaAs-AlGaAs; bistable field effect transistor; collector terminal; design optimisation; hysteresis; n-channel GaAs/AlGaAs transistor; negative collector bias; source-loop transitions; switching ratio;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940441
Filename
289247
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